Past research:
Semiconductor optics
Gallium Arsenide wafers used to produce fast microelectronic devices need to be as uniform as possible to make the production process cost effective. Photoluminescence and other optical methods may be used to test the material’s uniformity.

M.Maciaszek, D.W.Rogers, R.P.Bult, T.Steiner, Y.Zhang, S.Charbonneau, M.L.Thewalt,

 Photoluminescence for characterization of commercial semi‑insulating GaAs
Can. J. Phys.  67, 384,  (1989)

T.Steiner, Y.Zhang, M.L.Thewalt, M.Maciaszek, R.P.Bult,     

Quantitative, all‑optical prediction of the carrier density in semi‑insulating GaAs.
Appl. Phys. Lett.  56(7), 647,  (1990)

X-ray diffraction
Semiconducting  materials like Silicon or Gallium Arsenide which are used to produce microelectronic devices can be studied using X-ray diffraction techniques. Since the wavelengths of  X-rays  are comparable to distances between atoms in crystal lattice of these materials, X-rays may be diffracted and the interference pattern may be observed in carefully chosen experimental condition. The pattern is affected by any structural imperfections or strains present in the material. High quality microelectronic devices require high quality substrate (perfect crystals). X-ray diffraction methods can be used in the production process to evaluate or select material.

M.Maciaszek, X-ray section topographical images of implanted silicon crystals.
Phys. Stat. Sol., (a),  30, K1,  (1975)

M.Maciaszek, On the possibility of strain determination by section topography in the parallel geometry.
Kristal und Technik, 15, 6, 727,  (1980)

M.Maciaszek,  On the possibility of stress determination by consideration of the Pendellosung effect.
Z. Naturforsh., 37a, 626,  (1982)

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